Method for fabricating a semiconductor device

ABSTRACT

To fabricate a crystalline semiconductor film with controlled locations and sizes of the crystal grains, and to utilize the crystalline semiconductor film in the channel-forming region of a TFT in order to realize a high-speed operable TFT. A translucent insulating thermal conductive layer  2  is provided in close contact with the main surface of a substrate  1,  and an insular or striped first insulating layer  3  is formed in selected regions on the thermal conductive layer. A second insulating layer  4  and semiconductor film  5  are laminated thereover. The semiconductor film  5  is first formed with an amorphous semiconductor film, and then crystallized by laser annealing. The first insulating layer  3  has the function of controlling the rate of heat flow to the thermal conductive layer  2,  and the temperature distribution difference on the substrate  1  is utilized to form a single-crystal semiconductor film on the first insulating layer  3.

FIELD OF THE INVENTION

The present invention relates to a semiconductor film having acrystalline structure formed on a substrate with an insulating surfaceand to a method for its fabrication, as well as to semiconductor devicesemploying the semiconductor film as an active layer and to a method fortheir fabrication. The invention particularly relates to a thin filmtransistor having an active layer formed with a crystallinesemiconductor film. Throughout the present specification, “semiconductordevice” will refer generally to a device that functions by utilizingsemiconductor properties, and this includes electrooptical devicestypically including active-matrix type liquid crystal display devicesformed using thin film transistors, as well as electronic devices havingsuch electrooptical devices as mounted members thereof.

BACKGROUND OF THE INVENTION

Thin film transistors (hereunder abbreviated to TFTs) have beendeveloped that possess crystalline semiconductor films as active layers,obtained by forming amorphous semiconductor films on translucentinsulating substrates such as glass and crystallizing them by laserannealing, heat annealing or the like. The principal substrates used forfabrication of such TFTs are glass substrates consisting of bariumborosilicate glass or aluminoborosilicate glass. Such glass substrateshave poorer heat resistance than quartz substrates but have a lowermarket price, and therefore offer the advantage of allowing easiermanufacture of large-sized substrates.

Laser annealing is known as a crystallizing technique that canaccomplish crystallization by applying high energy only onto theamorphous semiconductor film, without significantly increasing thetemperature of the glass substrate. In particular, excimer lasersobtained by shortwave light output are thought to be most suited forthis use. Laser annealing using excimer lasers is carried out by usingan optical system to process a laser beam into a spot or line onto anirradiating surface, and scanning the irradiating surface with theprocessed laser light (moving the laser light irradiation positionrelative to the irradiating surface). For example, excimer laserannealing employing linear laser light can accomplish laser annealing ofan entire irradiating surface by scanning simply in the lengthwisedirection and the direction perpendicular thereto, and because of itsexcellent productivity it has become the main manufacturing techniquefor liquid crystal display devices employing TFTs.

Laser annealing can be applied for crystallization of many types ofsemiconductor materials. From the standpoint of TFT properties, however,the use of a crystalline silicon film as the active layer is thought tobe suitable since this allows a high degree of mobility to be realized.This technique was used to achieve a monolithic liquid crystal displaydevice having a pixel TFT forming an image section on one glasssubstrate and a driving circuit TFT provided around the image section.

However, crystalline silicon films fabricated by laser annealing areaggregates of multiple crystal grains whose locations and sizes arerandom, and therefore it has not been possible to deliberately formcrystal grains at desired locations. Consequently, it has been virtuallyimpossible to use single crystal grains to form TFT channel-formingregions, for which crystallinity is most crucial. At the interfacebetween the crystal grains (grain boundaries), the influence of thepotential level at the recrystallization centers, trapping centers orcrystal grain boundaries, which is a cause of amorphous structure orcrystal defects, has resulted in reduced carrier current conveyingcharacteristics. Because of this, the TFTs using crystalline siliconfilms as active layers obtained to date have not exhibited propertiesequivalent to those of MOS transistors fabricated on single crystalsilicon substrates.

As a method of solving this problem, it has been considered an effectivemeans to increase the crystal grain size while controlling the locationsof the crystal grains to eliminate the crystal grain boundaries from thechannel-forming region. For example, in “Location Control of Large GrainFollowing Excimer-Laser Melting of Si Thin-Films”, R. Ishihara and A.Burtsev, Japanese Journal of Applied Physics vol.37, No.3B,pp.1071-1075, 1998” there is disclosed a method for three-dimensionalcontrol of silicon film temperature distribution to achieve locationcontrol and large grain sizes of crystals. According to this method,excimer laser light is irradiated onto both sides of a wafer comprisinga high-melting-point metal formed as a film on a glass substrate, asilicon oxide film with a different film thickness partially formedthereover and an amorphous silicon film formed on the surface thereof,whereby it is reported that the crystal grain size can be increased to afew μm.

The aforementioned method of Ishihara et al. is characterized by locallyaltering the heat characteristics of the underlying material of theamorphous silicon film, in order to control the flow of heat to thesubstrate to introduce a temperature gradient. However, this requiresformation of a three-layer structure of a high-melting-point metallayer/silicon oxide layer/semiconductor film on the glass substrate.While it is structurally possible to form a top gate-type TFT with thesemiconductor film as the active layer, the parasitic capacitorgenerated between the semiconductor film and the high-melting-pointmetal layer increases the power consumption, thus creating a problemagainst realization of a high-speed operation TFT.

On the other hand, if the high-melting-point metal layer also serves asa gate electrode, it can be effectively applied to a bottom gate-type orinversed stagger-type TFT. However, in the aforementioned three-layerstructure, even if the thickness of the semiconductor film iseliminated, the film thickness of the high-melting-point metal layer andthe silicon oxide layer will not necessarily match the film thicknesssuited for the crystallization step and the film thickness suited forthe characteristics as a TFT element, such that it is impossible tosimultaneously satisfy the optimum design for the crystallization stepand the optimum design for the element structure.

Furthermore, when a non-translucent high-melting-point metal layer isformed over the entire surface of a glass substrate it is not possibleto fabricate a transmitting liquid crystal display device. Thehigh-melting-point metal layer is useful in terms of its high thermalconductivity, but the chrome (Cr) film or titanium (Ti) film that istypically used as the high-melting-point metal material exhibits a highinternal stress, and therefore often produces problems of cohesion withthe glass substrate. The effect of the internal stress reaches to thesemiconductor film formed on the top layer, and presents a concern ofacting as a force causing distortion in the formed crystallinesemiconductor film.

The present invention is a technique designed to overcome such problems,whereby a crystalline semiconductor film with controlled crystal grainlocations and sizes is fabricated, and the crystalline semiconductorfilm is used in a TFT channel-forming region to realize a TFT allowinghigh-speed operation. It is also an object of the invention to provide atechnique whereby such a TFT can be applied to various semiconductordevices such as transmitting liquid crystal display devices and imagesensors.

SUMMARY OF THE INVENTION

A means for solving the problems described above will now be explainedwith reference to FIG. 1. A translucent, insulating thermal conductivelayer 2 is provided in close contact with the main surface of asubstrate 1, and an insular or stripe-shaped first insulating layer 3 isformed in a selected region of the thermal conductive layer. A secondinsulating layer 4 and semiconductor film 5 are laminated thereover.First, the semiconductor film 5 is formed using a semiconductor filmwith an amorphous structure (amorphous semiconductor film). The firstinsulating layer 3 and second insulating layer 4 provide a function forcontrol of the flow rate of heat to the thermal conductive layer 2. Thesecond insulating layer 4 may also be absent. In any case, the amorphoussemiconductor film 5 is continuously formed in the region of thesubstrate in which the first insulating layer 3 is formed as well as theother regions.

The semiconductor film 5 formed with the amorphous structure iscrystallized into a crystalline semiconductor film. The crystallizationstep is most preferably carried out by laser annealing. An excimer laserlight source with a laser light output at a wavelength of 400 nm orlower is particularly preferred since it allows preferential heating ofthe semiconductor film. The excimer laser used may be a pulseoscillation type or continuous emission type. The light irradiated ontothe semiconductor film 5 may be a linear beam, spot beam, sheet beam orthe like depending on the optical system, and there are no limitationson its shape. The specific laser annealing conditions may beappropriately determined by the operator, but the crystallization stepaccording to the invention is generally carried out using a reaction oftransition from a molten to solid-phase state, as described below.

In laser annealing, the conditions for the irradiated laser light (orlaser beam) are optimized for heat melting of the semiconductor film,for control of the crystal nucleus generated density and the crystalgrowth from the crystal nucleus. In FIG. 1, region A delineated by thebroken lines is the region on the thermal conductive layer 2 on whichthe first insulating layer 3 is formed. Region B indicates thesurrounding region where the first insulating layer 3 is not formed. Thepulse width of the excimer laser is from a few nsec to a few dozen nsec,such as 30 nsec, and therefore irradiation at a pulse oscillationfrequency of 30 Hz results in instantaneous heating of the semiconductorfilm by the pulse laser light with a cooling time that is slightlylonger than the heating time. The semiconductor film is melted by thelaser light irradiation, but since the volume increases in region A bythe amount of formation of the first insulating layer, the temperatureincrease is lower than in region B. On the other hand, since the heatdiffuses through the thermal conductive layer 2 immediately aftercessation of the laser light irradiation, region B begins to cool morerapidly and is converted to solid phase, whereas region A cools in arelatively milder fashion.

The crystal nucleus is assumed to be produced and formed by the coolingprocess from melted state to solid phase state, but the nucleusgenerating density is correlated with the melted state temperature andthe cooling rate, and based on experimental observations, rapid coolingfrom high temperature has tended to result in a higher nucleusgenerating density. Consequently, the crystal nucleus generating densityin region B, which undergoes rapid cooling from the melted state, ishigher than in region A, and random generation of crystal nuclei formsmultiple crystal grains, resulting in relatively smaller grain sizesthan the crystal grains produced in region A. On the other hand, byoptimizing the laser light irradiation conditions and the firstinsulating layer 3 and second insulating layer 4 in region A, it ispossible to control the melted state temperature and the cooling rate inorder to cause one generated crystal nucleus to grow into a large-sizedcrystal.

Lasers allowing such crystallization also include solid state lasersthat are typically YAG lasers, HYO₄ lasers or YLF lasers. Such solidstate lasers are preferably laser diode excitation lasers, with a secondharmonic (532 nm), third harmonic (354.7 nm) and fourth harmonic (266nm). The irradiation conditions may be a pulse oscillation frequency of1-10 kHz, and a laser energy density of 300-600 mJ/cm² (typically350-500 mJ/cm²). Also, the entire surface of the substrate is irradiatedwith the laser beam converged into a line with a width of 100-1000 μm,or 400 μm, for example. The superposition (overlap) of the linear laserlight is 80-98%.

The crystallization step need not necessarily employ laser annealingalone, and a combination of heat annealing and laser annealing may alsobe used. For example, after crystallization of the amorphoussemiconductor film by initial heat annealing, it may be furtherirradiated with laser light to form the crystalline semiconductor film.The heat annealing used may be a crystallization method using a catalystelement.

In this crystallization step, the materials used for the thermalconductive layer 2 formed in close contact with the main surface of thesubstrate and for the first insulating layer 3 and second insulatinglayer 4, and their film thicknesses, must be carefully selected for thepurpose of controlling the transience of the thermal conductivity. Thethermal conductive layer must be of a material with a thermalconductivity of at least 10 Wm⁻¹K⁻¹ at ordinary temperature. Suchmaterials that may be used include compounds containing one or moredifferent components selected from among aluminum oxide, aluminumnitride, aluminum oxynitride, silicon nitride and boron nitride.Alternatively, there may be used compounds containing Si, N, O and M(where M is Al or at least one species selected from among rare earthelements).

On the other hand, the first insulating layer 3 and second insulatinglayer 4 employ a material with a thermal conductivity of less than 10Wm⁻¹K⁻¹ at ordinary temperature. A silicon oxynitride film is preferredas a material having such a thermal conductivity and being suitable as aground layer for the TFT formed on the glass substrate. A siliconnitride film or silicon oxide film may, of course, be usedalternatively. However, the most preferred material is a siliconoxynitride film fabricated from SiH₄ and N₂O by plasma CVD, forformation of the first insulating film 3 or second insulating film 4,and this composition may have an oxygen concentration of from 55 atomic% to 70 atomic % and a nitrogen concentration of from 1 atomic % to 20atomic %.

The first insulating layer 3 is likewise formed in an insular or stripeddivided pattern in alignment with the position of the active layer ofthe TFT (the semiconductor film on which are formed the channel-formingregion, source region, drain region and LDD region) on the glasssubstrate. Its size may be a submicron size of 0.35×0.35 μm² (channellength×channel length) to match the size of the TFT, for example, or itmay be 8×8 μm², 8×200 μm² or 12×400 μm². By forming the first insulatinglayer 3 to match the location and size of the TFT channel-formingregion, it is possible to form the channel-forming region with onecrystal grain of the crystalline semiconductor film formed thereover.That is, it the same structure is obtained as by forming thechannel-forming region with substantially a single crystal layer. Here,the angle of the side wall at the edge of said first insulating layerwith the main surface of said substrate is preferably between 10° and40°.

By utilizing this phenomenon, it is possible to achieve large-sizedcrystal grains present on the crystalline semiconductor film. Thelocations of the crystal grains can also be aligned with the locationsforming the TFT active layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an illustration of a construction according to the invention.

FIGS. 2A-E are cross-sectional views of fabrication steps for acrystalline semiconductor film according to the invention.

FIG. 3 is a cross-sectional view of a crystalline semiconductor filmaccording to the invention.

FIGS. 4A-F are cross-sectional views of fabrication steps for acrystalline semiconductor film according to the invention.

FIGS. 5A-E are cross-sectional views of fabrication steps for a TFT.

FIGS. 6A-E are cross-sectional views of fabrication steps for a TFT.

FIGS. 7A-C are cross-sectional views of fabrication steps for a TFT.

FIGS. 8A-D are cross-sectional illustrations of the construction of aground layer.

FIGS. 9A-D are cross-sectional views of fabrication steps for a pixelTFT and driving circuit TFT.

FIGS. 10A-D are cross-sectional views of fabrication steps for a pixelTFT and driving circuit TFT.

FIGS. 11A-D are cross-sectional views of fabrication steps for a pixelTFT and driving circuit TFT.

FIGS. 12A-C are cross-sectional views of fabrication steps for a pixelTFT and driving circuit TFT.

FIG. 13 is a cross-sectional view of a pixel TFT and a driving circuitTFT.

FIGS. 14A-C are top views of fabrication steps for a driving circuitTFT.

FIGS. 15A-C are top views of fabrication steps for a pixel TFT.

FIGS. 16A-C are cross-sectional views of fabrication steps for a drivingcircuit TFT.

FIGS. 17A-C are top views of fabrication steps for a pixel TFT.

FIG. 18 is a top view showing the I/O terminal, wiring and circuitlayout of a liquid crystal display device.

FIG. 19 is a cross-sectional view showing the structure of a liquidcrystal display device.

FIG. 20 is a perspective view of the structure of a liquid crystaldisplay device.

FIG. 21 is a top view showing a pixel in a pixel section.

FIG. 22 is an illustration of the structure of a laser annealingapparatus.

FIG. 23 is an illustration of the structure of the reaction chamber of alaser annealing apparatus.

FIGS. 24A and B are pairs of illustrations showing the structure of anactive matrix-type EL display device.

FIGS. 25A-F are sets of illustrations showing examples of semiconductordevices.

FIGS. 26A-D are illustrations of the structure of a projection liquidcrystal display device.

FIGS. 27A-F are cross-sectional views of fabrication steps for a TFT.

FIGS. 28A-F are cross-sectional views of fabrication steps for a TFT.

PREFERRED EMBODIMENTS OF THE INVENTION

Embodiment 1

An embodiment of the invention will now be explained with reference toFIG. 2. In FIG. 2(A), an inorganic alkali glass substrate such as bariumborosilicate glass or aluminoborosilicate glass is used for thesubstrate 501. For example, a #7059 glass substrate or #1737 glasssubstrate by Corning Co. may be suitably used. Such glass substrates maybe heat treated beforehand at a temperature of about 10-20° C. below theglass distortion point, in order to reduce deformation by contraction ofthe substrate in the subsequent steps.

A translucent, insulating thermal conductive layer 502 with excellentthermal conductivity is formed on the surface of the substrate 501 onwhich the TFT is to be formed. The thickness of the thermal conductivelayer 502 is 50-500 nm, and the thermal conductivity must be at least 10Wm⁻¹K⁻¹. Such suitable materials include aluminum oxide (Al₂O₃) which istranslucent to visible light and has a thermal conductivity of 20Wm⁻¹K⁻¹. Aluminum oxide is not limited to the stoichiometric ratio, andother elements may also be added to control the properties such as thethermal conductivity and internal stress. For example, nitrogen may beincluded in the aluminum oxide for use as aluminum oxynitride(AlN_(x)O_(1−x):0.02≦x≦0.5), and aluminum nitrides (AlN_(x)) may also beused. Compounds containing silicon (Si), oxygen (O), nitrogen (N) and M(where M is aluminum (Al) or at least one species selected from amongrare earth elements) may also be used. For example, AlSiON and LaSiONmay be suitably used. In addition, boron nitride and the like are alsosuitable for use.

The oxide, nitride or other compound may be formed by sputtering. Thismethod employs a target with a given composition for formation bysputtering using an inert gas such as argon (Ar) or nitrogen. There mayalso be formed a thin-film diamond layer or DLC (Diamond-Like Carbon)layer for a thermal conductivity reaching 1000 Wm⁻¹K⁻¹.

The first insulating layer 503 is formed thereover. The material usedfor the first insulating layer has a thermal conductivity of less than10 Wm⁻¹K⁻¹. The material may be selected from among silicon oxide filmsand silicon nitride films, but a silicon oxynitride film is preferablyformed. The silicon oxynitride film is fabricated by the plasma CVDmethod using SiH₄ and N₂O as the starting material gases. O₂ may also beadded to the starting material gases. The fabrication conditions are notrestricted, but a silicon oxynitride film as the first insulating filmhas a thickness of 50-500 nm, an oxygen concentration of from 55 atomic% to 70 atomic % and a nitrogen concentration of from 1 atomic % to 20atomic %. This composition will reduce the internal stress of thesilicon oxynitride film while also reducing the fixed charge density.

The first insulating film 503 is etched in an insular or striped fashionas shown in FIG. 2(B). The etching is carried out in a solutioncontaining hydrogen fluoride (HF) or ammonium hydrogen fluoride(NH₄HF₂). The sizes within the insularly formed first insulating film504, 505 are determined as appropriate. The size will depend on the use,but for example, it may be a submicron size of 0.35×0.35 μm² (channellength×channel length) to match the size of the TFT, for example, or itmay be 8×8 μm², 8×200 μm² or 12×400 μm². By forming the first insulatinglayer 504, 505 in a manner that at least matches the location and sizeof the TFT channel-forming region, it is possible to form thechannel-forming region with one crystal grain of the crystallinesemiconductor film formed thereover. By etching into a tapered shape sothat the angle of the side wall at the edge of the first insulatinglayer 504, 505 with the main surface of the substrate 501 is between 10°and 40°, the step coverage of the film laminated thereover is ensured.The thermal conductive film 502 and first insulating film 503, 504fabricated in this manner will be referred to as the ground layerthroughout this specification.

Next, a semiconductor film 506 with an amorphous structure is formed toa thickness of 25-80 nm (preferably 30-60 nm) by a publicly known methodsuch as plasma CVD or sputtering. For this embodiment, an amorphoussilicon film was formed to a thickness of 55 nm by plasma CVD. Thesemiconductor film with the amorphous structure may be an amorphoussemiconductor film or a microcrystalline semiconductor film, and acompound semiconductor film having an amorphous structure, such as anamorphous silicon-germanium film, may also be used.

The amorphous semiconductor film 506 is then crystallized by laserannealing. The crystallization method used may also be rapid thermalannealing (RTA). The light source used for RTA is an infrared lamp,halogen lamp, metal halide lamp, xenon lamp or the like. In thecrystallization step, it is preferred to first discharge the hydrogencontained in the amorphous semiconductor film, and then conduct heattreatment for about one hour at 400-500° C. to reduce the hydrogencontent to under 5 atomic %.

When the crystallization is accomplished by laser annealing, the lightsource is a pulse oscillation type or continuous emission type excimerlaser or argon laser, or a solid body laser such as a YAG laser. FIG. 22shows the structure of such a laser annealing apparatus. An excimerlaser or argon laser is used in the laser light emitting apparatus 2101.The laser beam emitted from the laser light generating apparatus 2101 isexpanded in one direction by beam expanders 2102, 2103, and the laserbeam reflected by a mirror 2104 is split with a cylindrical lens array2105 and converted to a linear beam with a line width of 100-1000 μm bycylindrical lenses 2106, 2107, and irradiated to form an irradiatedregion 2110 on the sample side. The substrate 2108 is held on a stage2109 in a manner allowing operation in the X direction, Y direction andθ direction. Also, by moving the stage 2109 with respect to theirradiated region 2110 it is possible to accomplish laser annealingacross the entire surface of the substrate 2108. Here, the substrate2108 may be held in an atmosphere of air, or a reaction chamber such asshown in FIG. 23 may be provided to accomplish crystallization whileholding under reduced pressure or in an inert gas atmosphere.

FIG. 23 is an illustration of an embodiment relating to a method ofholding a substrate in the laser annealing apparatus explained withreference to FIG. 22. The substrate 2108 held on the stage 2109 is setin the reaction chamber 2206. The reaction chamber interior may bebrought under reduced pressure or an inert gas atmosphere with a vacuumsystem or gas system (not shown), and the stage 2109 may be moved in thereaction chamber along a guide rail 2207. The laser light enters througha quartz window (not shown) provided over the substrate 2108. With thisconstruction, it is possible to heat the substrate 2108 to 300-500° C.with heating means (not shown) provided on the stage 2109. In FIG. 23, atransfer chamber 2201, intermediate chamber 2202 and load/unload chamber2203 are connected with the reaction chamber 2206, and separatedtherefrom with partitioning valves 2208, 2209. In the load/unloadchamber 2203 there is placed a cassette 2204 capable of holding multiplesubstrates, and the substrates are conveyed by a conveying robot 2205provided in the transfer chamber 2201. The substrate 2108′ is asubstrate being conveyed. This type of construction allows continuoustreatment by laser annealing under reduced pressure or in an inert gasatmosphere.

The laser annealing conditions are appropriately selected by theoperator, for example, with an excimer laser pulse oscillation frequencyof 30 Hz and a laser energy density of 100-500 mJ/cm² (typically 300-400mJ/cm²). A linear beam with a line width of 100-1000 μm, for example aline width of 400 μm, is irradiated across the entire surface of thesubstrate. Since this line width is larger than the insularly formedfirst insulating film, the amorphous silicon layer on the firstinsulating film may be crystallized with irradiation of one pulse of thelinear beam. Also, multiple irradiations may be effected while scanningthe linear beam. The superposition (overlap) of the linear beam at thistime may be 50-98%. The same treatment may be carried out even if theshape of the laser beam is planar.

If the pulse oscillation frequency of the excimer laser is 30 Hz, thepulse width will be from a few nsec to a few dozen nsec, such as 30nsec, and therefore irradiation of a pulse linear laser beam on theamorphous silicon film results in instantaneous heating, with a coolingtime that is slightly longer than the heating time. At that time, asshown in FIG. 2(D), if the region in which the first insulating film isformed is designated as region A and the other region as region B, thevolume increases in region A by the amount of formation of the firstinsulating layer, and therefore the temperature increase due to laserbeam irradiation is lower than in region B. On the other hand, since theheat diffuses through the thermal conductive layer 502 immediately aftercessation of the laser beam irradiation, region B cools more rapidly.

When a continuous emission type excimer laser is used as the laseremitting apparatus 2101, the same optical system is used. For example,if a continuous emission type excimer laser with an output of 1000 W isused, the optical system may be used to create a 400 μm×125 mm linearbeam for scanning of the entire substrate surface at a scanning rate of0.1-10 m/sec.

With laser annealing, the conditions of the irradiating laser beam areoptimized to control the crystal nucleus generating density and crystalgrowth from the crystal nuclei. Since temperature change during heatingand cooling in region A is relatively milder, growth of the crystalgrains occurs from the center of the semiconductor film 508 in region A,allowing growth of a single crystal across almost the entire surface ofthe first insulating layer 504, 505. On the other hand, since region Bcools more rapidly, only small crystal grains grow in the semiconductorfilm 507 in region B, giving a structure with aggregates of a pluralityof crystal grains. It is thus possible to form a crystallinesemiconductor film with controlled crystal grain locations.

A photoresist pattern may then be formed on region A of the formedcrystalline semiconductor film, and the crystalline silicon film onregion B selectively removed by dry etching to form an insularsemiconductor layer 509, 510. A CF₄ and O₂ mixed gas may be used for thedry etching. The insular semiconductor layer 509, 510 fabricated in thismanner has a residual defect level of 10¹⁶-10¹⁸/cm³, and therefore itmay be subjected to heat treatment at a temperature of 300-450° C. in ahydrogen atmosphere, a nitrogen atmosphere containing 1-3% hydrogen oran atmosphere containing hydrogen produced by plasma heating, for thestep of hydrogenation. With the hydrogenation step, hydrogen is added tothe insular semiconductor layer 509, 510 at about 0.01-0.1 atomic %.Thus, an insular semiconductor layer 509, 510 is formed by a singlecrystal grain and is substantially equivalent to a single crystal, sothat formation of an element such as a TFT on that section can providecharacteristics comparable to a MOS transistor formed on a singlecrystal silicon substrate.

Embodiment 2

In the embodiment shown in FIG. 3, a thermal conductive layer 502 isformed on a substrate 501 and a first insulating layer 504, 505 isformed thereover in the same manner as Embodiment 1. Next, a secondinsulating layer 511 is formed on the thermal conductive layer and thefirst insulating layer. The second insulating layer may also be formedof a silicon oxynitride film, as the first insulating layer. An insularsemiconductor layer 509, 510 may be formed on the second insulatinglayer 511 by the same procedure as in Embodiment 1.

The film thickness of the second insulating layer 511 is altered toallow control of the rate at which heat diffuses from the semiconductorfilm to the substrate. Since aluminum nitride and similar compounds haverelatively large internal stress, though it depends on the type ofmaterial used as the heat conductive layer and the fabricationconditions, the influence thereof generates distortion at the interfacewith the semiconductor film, which sometimes adversely affectscrystallization; however, if a low internal stress silicon oxynitridefilm is formed such as shown in FIG. 3, it is possible to alleviate thatadverse effect. In this case, the thickness of the second insulatinglayer may be 5-100 nm.

Embodiment 3

The fabrication method for a crystalline semiconductor film to serve asa TFT active layer is not limited only to laser annealing, as laserannealing may be used in combination with heat annealing. For example,the same effect may be achieved if a substrate on which is formed asemiconductor film 506 having an amorphous structure (amorphous siliconfilm) in the state shown in FIG. 2(C) is heated at about 600-670° C. forabout 4-12 hours using a furnace annealer for crystallization, and thentreated by the laser annealing method explained in Embodiment 1.Crystallization by heat annealing can also be applied as acrystallization method using the catalyst element disclosed in JapaneseLaid-Open Patent Publication No. 130652 of 1995.

As shown in FIG. 4(A), a thermal conductive layer 502 is formed on aglass substrate 501 and a first insulating layer 504, 505 is formedthereover in the same manner as Embodiment 1. A second insulating layer511 may also be formed in the same manner as Embodiment 2, or this layermay be omitted. An amorphous semiconductor film 506 is then formed to athickness of 25-80 nm by plasma CVD or sputtering. For example, anamorphous silicon film is formed to a thickness of 55 nm. An aqueoussolution containing 10 ppm of a catalyst element in terms of weight isapplied by spin coating to form a catalyst element-containing layer 512.The catalyst element may be nickel (Ni), germanium (Ge), iron (Fe),palladium (Pd), tin (Sn), lead (Pb), cobalt (Co), platinum (Pt), copper(Cu), gold (Au) or the like. The catalyst element-containing layer 512may be formed to a thickness of 1-5 nm as a catalyst element layer bysputtering or vapor deposition instead of spin coating.

By selectively forming the first insulating layer 504, 505 it ispossible to form irregularities on the surface of the amorphoussemiconductor film 506. When an aqueous solution containing the catalystelement is applied by spin coating to form the catalystelement-containing layer 512, the thickness of the catalystelement-containing layer 512 is not uniform, being relatively thicker atthe trench regions in which the first insulating layer is not formed.This results in a greater concentration of the catalyst elementdiffusing into the semiconductor film in the subsequent heat annealingstep.

In the crystallization step shown in FIG. 4(B), first heat treatment iscarried out at 400-500° C. for about one hour to reduce the hydrogencontent of the amorphous silicon film to 5 atomic %. A furnace annealeris then used for heat annealing in a nitrogen atmosphere at 550-600° C.for 1-8 hours. Such a crystalline silicon film can be obtained by thisstep. However, the crystalline semiconductor film 513 fabricated by theheat annealing up to this step comprises multiple crystal grains asobserved microscopically with a transmission electron microscope, andthe sizes and locations of the crystal grains are not uniform butrandom. Also, Raman spectroscopic observation shows local residue ofamorphous regions.

It is effective to control the crystal grains of this crystallinesemiconductor film 513 to form them in prescribed locations, whileaccomplishing laser annealing at this stage in order to achievelarge-sized crystals. With laser annealing, the crystallinesemiconductor film 513 is first melted and then recrystallized, thusallowing the aforementioned object to be achieved. For example, an XeClexcimer laser (wavelength: 308 nm) is used to form a linear beam with anoptical system, and irradiation is performed with an oscillationfrequency of 5-50 Hz, an energy density of 100-500 mJ/cm² and a linearbeam overlap of 80-98%. Here, as shown in FIG. 4(C), in region A wherethe first insulating layer 504, 505 is formed and in the surroundingregion B, there is a difference in the maximum temperature of heating bythe laser beam irradiation and in the cooling rate after irradiation, sothat large crystal grains easily grow in region A while the rapidcooling in region B can only grow small crystal grains. Thus, it ispossible to form a crystalline semiconductor film in which the locationsof the large grains are controlled.

In this manner, the crystalline semiconductor film 514 formed andfabricated on the first insulating layer can produce an approximatelysingle crystal in that region. The rest of the crystalline semiconductorfilm 515 is a region formed by relatively small and randomly-sizedcrystal grains. However, in this state, the concentration of thecatalyst element remaining on the surface of the crystallinesemiconductor film 514, 515 is 3×10¹⁰−2×10¹¹ atoms/cm².

Here, a step of gettering may be carried out, as disclosed in JapaneseLaid-Open Patent Publication No. 247735 of 1998. The gettering step canreduce the concentration of the catalyst element in the crystallinesilicon film to under 1×10¹⁷ atoms/cm³, and preferably to 1×10¹⁶atoms/cm³. First, as shown in FIG. 4(D), a mask insulating film cover516 is formed on the surface of the crystalline semiconductor film 514,515 to a thickness of 150 nm, and holes 517 are formed by patterning,thus exposing the crystalline silicon film. A step of phosphorusaddition is also carried out to provide a phosphorus-containing region518 in the crystalline silicon film. In this state, as shown in FIG.4(E), with heat treatment in a nitrogen atmosphere at 500-800° C.(preferably 500-550° C.) for 5-24 hours, for example at 525° C. for 12hours, the phosphorus-containing region 518 acts as a gettering site, toallow segregation of the catalyst element remaining in the crystallinesilicon film 514, 515 into the phosphorus-containing region 518. Also,by removing the mask insulating film cover 516 and phosphorus-containingregion 518 and forming an insular semiconductor layer 519, 520 as shownin FIG. 4(F), it is possible to obtain a crystalline silicon film withthe concentration of the catalyst element used in the crystallizationstep reduced to 1×10¹⁷ atoms/cm³.

Thus, by carrying out a step of crystallization by laser annealingaccording to the invention on a crystalline silicon film fabricated byheat annealing whereby the catalyst element is heated, it is possible toobtain a crystalline semiconductor film with larger crystal grains thanby the step of crystallization with only the laser annealing shown forEmbodiment 1. However, since a defect level of 10¹⁶−10¹⁸/cm³ remains inthe fabricated insular semiconductor layer 519, 520, it may be subjectedto heat treatment at a temperature of 300-450° C. in a hydrogenatmosphere, a nitrogen atmosphere containing 1-3% hydrogen or anatmosphere containing hydrogen produced by plasma heating, for a step ofhydrogenation to reduce the defect density to under 10¹⁶/cm³. With thehydrogenation step, hydrogen is added to the insular semiconductor layer519, 520 at about 0.01-0.1 atomic %.

EXAMPLES Example 1

In this example, a step of fabricating a CMOS circuit comprising ann-channel type TFT and p-channel type TFT will be explained withreference to FIGS. 5 and 6.

In FIG. 5(A), the substrate 101 used is barium borosilicate glass oraluminoborosilicate glass, typical examples of which are #7059 glass and#1737 glass. It may be heat treated beforehand at a temperature of about10-20° C. below the glass distortion point, in order to reducedeformation by contraction of the substrate in the subsequent steps. Atleast one translucent, insulating thermal conductive layer 102 is formedon the surface of the substrate 101 on which the TFT is to be formed. Itis formed with aluminum oxynitride (AlN_(x)O_(1−x):0.02≦x≦0.5) to athickness of 50-500 nm. It may also be formed of Si, N, O or M (where Mis at least one element selected from among Al, Y, La, Gd, Dy, Nd, Smand Er), for example, AlSiON or LaSiON. This thermal conductive layercan be formed by sputtering. A target with a given composition may beused for formation by sputtering using an inert gas such as argon (Ar)or nitrogen. There may also be formed a thin-film diamond layer or DLC(Diamond-Like Carbon) layer for a thermal conductivity reaching 1000Wm⁻¹K⁻¹.

A silicon oxynitride film is formed to a thickness of 50-500 nm, withfabrication from SiH₄ and N₂O by the plasma CVD method, and partialetching is performed in a solution containing hydrogen fluoride (HF) andammonium hydrogen fluoride (NH₄HF₂), to form an insular first insulatingfilm 103, 104. The oxygen concentration of the first insulating film isfrom 55 atomic % to 70 atomic % and the nitrogen concentration is from 1atomic % to 20 atomic %. This composition will reduce the fixed chargedensity in the film while also producing a denser film.

The size of the insularly formed first insulating film 103, 104 is thesame size or slightly larger than the insular semiconductor layer to beformed as the active layer in a subsequent step. Alternatively, it maybe the same size or slightly larger than the TFT channel-forming region.The size of the insular semiconductor layer will be appropriatelydetermined based on the required TFT characteristics, and for example,it may be 20 μm×8 μm (length in channel length direction×length inchannel width direction), or other sizes such as 28 μm×30 μm or 45 μm×63μm. Consequently, the outer dimensions of the first insulating film 103,104 is matched to the respective sizes of the insular semiconductorlayer, at the same size or about 1-20% larger. Taper etching isperformed so that the angle of the side wall at the edge of the firstinsulating layer 103, 104 is from 10° to 40° with the main surface ofthe glass substrate, to guarantee a step or barege for the filmlaminated thereover.

A second insulating film 105 is also formed comprising a siliconoxynitride film that is fabricated from SiH₄ and N₂O by plasma CVD. Thecomposition of the silicon oxynitride film has an oxygen content of from55 atomic % to 65 atomic % and a nitrogen content of from 1 atomic % to20 atomic %, whereby the internal stress is reduced to avoid directstress on the semiconductor layer formed thereover. The secondinsulating layer is formed to a thickness of 10-200 nm (preferably20-100 nm). The second insulating layer can be omitted as shown inEmbodiment 1.

Next, a semiconductor layer with an amorphous structure is formed by apublicly known method such as plasma CVD or sputtering to a thickness of25-80 nm (preferably 30-60 nm). For example, an amorphous silicon filmis formed to a thickness of 55 nm by plasma CVD. The semiconductor filmhaving an amorphous structure may be an amorphous semiconductor film ora microcrystalline semiconductor film, and a compound semiconductor filmhaving an amorphous structure, such as an amorphous silicon-germaniumfilm, may also be used. Also, of the ground layers, both the secondinsulating layer and the amorphous semiconductor layer may be formedcontinuously.

One of the methods described for Embodiments 1-3 is selected to form thecrystalline semiconductor film (in this case, a crystalline siliconfilm), and etching treatment is performed to form an insularsemiconductor layer 107, 108 a. The etching treatment is accomplished bydry etching, using a mixed gas of CF₄ and O₂. The insular semiconductorlayer 107, 108 a each consists of a single crystal grain, and thepattern formed layer by etching was considered to be substantially asingle crystal. Next, a mask layer 109 is formed by a silicon oxide filmwith a thickness of 50-100 nm by plasma CVD, reduced pressure CVD orsputtering. For example, in the case of plasma CVD, tetraethylorthosilicate (TEOS) and O₂ are mixed, and the film is formed to athickness of 100-150 nm, typically 130 nm, at a reaction pressure of 40Pa, a substrate temperature of 300-400° C., and discharge at a highfrequency (13.56 MHz) current density of 0.5-0.8 W/cm².

FIG. 7(A) shows a top view of FIG. 5(A). In FIG. 7(A), the mask layerand first and second insulating films are omitted. The insularsemiconductor layer 107, 108 b are provided so that the insularpattern-formed first insulating layer 103, 104 portions each overlap. InFIG. 7(A), cross-section A-A′ corresponds to the cross-sectionalstructure shown in FIG. 5(A).

A photoresist mask 110 is provided as shown in FIG. 5(B), and a p-typeimpurity element is added to a concentration of about 1×10¹⁶ to 5×10¹⁷atoms/cm³ for the purpose of controlling the threshold voltage of theinsular semiconductor layer 108 a on which the n-channel type TFT is tobe formed. Elements of Group 13 of the Periodic Table such as boron (B),aluminum (Al) and germanium (Ge) are known as p-type impurity elementsfor semiconductors. Here, diborane (B₂H₆) was used for addition of boron(B) by ion doping. The boron (B) addition is not always necessary andmay be omitted, but a semiconductor layer 108 b containing boron (B) canbe formed to limit the threshold voltage of the n-channel type TFT towithin the prescribed range.

For formation of an n-channel type TFT LDD region, an n-type impurityelement is selectively added to the insular semiconductor layer 108 b.Elements of Group 15 of the Periodic Table such as phosphorus (P),arsenic (As) and antimony (Sb) are known as n-type impurity elements. Aphotoresist mask 111 is formed, and in this case ion doping was appliedusing phosphine (PH₃) in order to add phosphorus (P). The phosphorus (P)concentration of the formed impurity region 12 is in the range of 2×10¹⁶to 5×10¹⁹ atoms/cm³ (FIG. 5(C)). Throughout this specification, theconcentration of the n-type impurity element included in the impurityregion 112 will be indicated as (n⁻).

Next, the mask layer 109 was removed with an etching solution ofhydrofluoric acid diluted with purified water. In FIGS. 5(B) and (C), astep of activating the impurity element added to the insularsemiconductor layer 108 b is carried out. The activation may be carriedout by a method such as heat annealing for 1-4 hours at 500-600° C. in anitrogen atmosphere, or by a different method such as laser annealing.Both methods may also be used in combination. In this example, a laseractivating method was used, with an excimer laser employed to form alinear beam at an oscillation frequency of 5-50 Hz, an energy density of100-500 mJ/cm² and a linear beam overlap of 80-98%, for treatment of theentire surface of the substrate on which the insular semiconductor layerhad been formed. There are no particular restrictions on the laser lightirradiation conditions, and they may be appropriate determined by theoperator.

A gate insulating film 113 is formed of an insulating film containingsilicon to a film thickness of 40-150 nm using plasma CVD or sputtering.For example, it may be formed with the same silicon oxynitride film asthe first insulating film, to a thickness of 120 nm. A siliconoxynitride film fabricated with addition O₂ to SiH₄ and N₂O is even moresatisfactory because the fixed charge density of the film is reduced.The gate insulating film is not limited to such a silicon oxynitridefilm, and another type of silicon-containing insulating film may be usedwith a single layer or laminated structure (FIG. 5(D)).

As shown in FIG. 5(E), a conductive layer is formed on the gasinsulating film for formation of a gate electrode. This conductive layermay be formed as a single layer, or if necessary it may be a double ortriple laminated structure. For this example, the structure was alaminate of conductive layer (A) 114 made of a conductive metal nitridefilm and conductive layer (B) 115 made of a metal film. The conductivelayer (B) 115 may be formed of an element selected from among tantalum(Ta), titanium (Ti), molybdenum (Mo) and tungsten (W), or an alloycomposed mainly of such an element, or an alloy film with a combinationof these elements (typically a Mo—W alloy film or Mo—Ta alloy film), andthe conductive layer (A) 114 may be formed of tantalum nitride (TaN),tungsten nitride (WN), titanium nitride (TiN), molybdenum nitride (MoN)or the like. The conductive layer (A) 114 may also employ tungstensilicide, titanium silicide or molybdenum silicide. The conductive layer(B) 115 may have a reduced impurity concentration in order to achievelower resistance, and an oxygen concentration of 30 ppm or lower wasfound to be particularly satisfactory. For example, with tungsten (W) itis possible to realize a low resistance value of under 20 μΩcm if theoxygen concentration is 30 ppm or lower.

The conductive layer (A) 114 may be 10-50 nm (preferably 20-30 nm), andthe conductive layer (B) 115 may be 200-400 nm (preferably 250-350 nm).In this example, a TaN film with a thickness of 30 nm was used as theconductive layer (A) 114 and a 350 nm Ta film was used as the conductivelayer (B) 115, both of which were formed by sputtering. The TaN film wasmade using a mixed gas of Ar and nitrogen as the sputtering gas, and Taas the target. Ar was used as the sputtering gas for Ta. By adding asufficient amount of Xe or Kr to the sputtering gases, it is possible toalleviate internal stress of the formed films and prevent separation ofthe films. The resistivity of an χ-phase Ta film is about 20 μΩcm and itcan therefore be used as a gate electrode, but the resistivity of aβ-phase Ta film is about 180 μΩcm and it is therefore unsuitable as agate electrode. The TaN film has a nearly −phase crystal structure, andtherefore formation of a Ta film thereover can easily give an χ-phase Tafilm. While not shown in the drawings, it is effective to form a siliconfilm doped with phosphorus (P), to a thickness of about 2-20 nm underthe conductive layer (A) 114. This can improve cohesion and preventoxidation of the conductive film formed thereover while also preventingdiffusion of the trace alkali metal elements in the conductive layer (A)and conductive layer (B) into the gate insulating film 113. In any case,the conductive layer (B) preferably has a resistivity in the range of10-500 μΩcm.

Next, a photoresist mask with the desired pattern is formed, and theconductive layer (A) 114 and conductive layer (B) 115 are etchedtogether to form gate electrodes 116, 117. For example, a mixed gas ofCF₄ and O₂, or Cl₂, is used for dry etching at a reaction pressure of1-20 Pa. The gate electrodes 116, 117 are formed by integration of 116a, 117 a made of the conductive layer (A) and 116 b, 117 b made of theconductive layer (B). Here, the gate electrode 117 provided with ann-channel type TFT overlaps with a portion of the impurity region 112via the gate insulating film 113. The gate electrodes may also be formedof the conductive layer (B) alone (FIG. 6(A)).

FIG. 7(B) shows a top view of FIG. 6(A). In FIG. 7(B), the gateinsulating film and the first and second insulating films are omitted.The gate electrodes 116, 117 provided on the insular semiconductorlayers 107, 108 b via the gate insulating film are connected to a gatewiring 128. In FIG. 7(B), cross-section A-A′ corresponds to thecross-sectional structure shown in FIG. 6(A).

Next, an impurity region 119 is formed as a source region and drainregion in the insular semiconductor layer 107 on which the p-channeltype TFT is to be formed. Here, the gate electrode 116 is used as a maskfor addition of a p-type impurity element, to form a self-aligningimpurity region. The insular semiconductor layer 108 b in which then-channel type TFT is to be formed is covered at this time with aphotoresist mask 118. The impurity region 119 is formed by an ion dopingmethod using diborane (B₂H₆). The boron (B) concentration of this regionis 3×10²⁰ to 3×10²¹ atoms/cm³ (FIG. 6(B)). Throughout thisspecification, the concentration of the p-type impurity element in theimpurity region 134 formed here will be represented as (p⁺).

Next, an impurity region 121 to form a source region or drain region wasformed in the insular semiconductor layer 108 b on which the n-channeltype TFT was to be formed. This was accomplished by an ion doping methodusing phosphine (PH₃), and the phosphorus (P) concentration in theregion was in the range of 1×10²⁰ to 1×10²¹ atoms/cm³ (FIG. 6(C)).Throughout the present specification, the concentration of the n-typeimpurity element in the impurity region 121 formed here will berepresented as (n⁺). Phosphorus (P) is also added simultaneously to theimpurity region 119, but since the concentration of phosphorus (P) addedto the impurity region 117 is about ½ to ⅓ of the boron (B)concentration already added in the previous step, the p-typeconductivity is guaranteed so that there is no effect on the propertiesof the TFT.

This was followed by a step of heat annealing for activation of then-type or p-type impurity element added in to their respectiveconcentrations. This step can be accomplished by furnace annealing. Itmay also be accomplished by laser annealing or rapid thermal annealing(RTA). The annealing treatment is carried out in a nitrogen atmospherewith an oxygen concentration of no greater than 1 ppm and preferably nogreater than 0.1 ppm, at 400-700° C. and typically 500-600° C., and forthis example heat treatment was carried out at 550° C. for 4 hours.Prior to the annealing treatment, a protective insulating layer 122 witha thickness of 50-200 nm may be formed of a silicon oxynitride film orsilicon oxide film. The silicon oxynitride film may be formed under anyof the conditions listed in Table 1, or it may be formed with SiH₄ at 27SCCM, N₂O at 900 SCCM, a reaction pressure of 160 Pa, a substratetemperature of 325° C. and a discharge current density of 0.1 W/cm²(FIG. 6(D)).

After the activation step, a step was performed for hydrogenation of theinsular semiconductor layer by heat treatment at 300-450° C. for 1-12hours in an atmosphere containing 3-100% hydrogen. This step is a stepfor terminating the 10¹⁶-10¹⁸ cm³ dangling bond of the insularsemiconductor layer by thermally excited hydrogen. Plasma hydrogenation(using plasma-excited hydrogen) may also be carried out as another meansfor hydrogenation.

After completion of the steps of activation and hydrogenation, aninterlayer insulating film 123 is formed by laminating a siliconoxynitride film or silicon oxide film on the protective insulating film.The silicon oxynitride film is formed to a thickness of 500-1500 nm(preferably 600-800 nm) in the same manner as the insulating film 119,with SiH₄ at 27 SCCM, N₂O at 900 SCCM, a reaction pressure of 160 Pa, asubstrate temperature of 325° C. and a discharge current density of 0.15W/cm². Contact holes are formed reaching to the TFT source region ordrain region of the interlayer insulating film 123 and protectiveinsulating film 122, forming source wirings 124-125 and a drain wiring126. While not shown here, in this example the electrode has athree-layer laminated structure with continuous formation of a Ti filmto 100 nm, a Ti-containing aluminum film to 300 nm and a Ti film to 150nm by sputtering.

Next, a silicon nitride film, silicon oxide film or a silicon oxynitridefilm is formed to a thickness of 50-500 nm (typically 100-300 nm) as apassivation film 127. Hydrogenation treatment in this state gavefavorable results for enhancement of the TFT characteristics. Forexample, heat treatment may be carried out for 1-12 hours at 300-450° C.in an atmosphere containing 3-100% hydrogen, or a similar effect may beachieved by using a plasma hydrogenation method. This heat treatment canalso cause diffusion of the hydrogen present in the interlayerinsulating layer 123 and protective insulating layer 122 into theinsular semiconductor layer 107, 108 b for hydrogenation. In any case,it is preferred to reduce the defect density of the insularsemiconductor layer 107, 108 b to under 10¹⁶/cm³, and it was found thatinclusion of hydrogen to 0.01-0.1 atomic % was satisfactory for thispurpose.

It was thus possible to complete an n-channel type TFT 151 and ap-channel type TFT 150 on a substrate 101, as shown in FIG. 6(E). Thep-channel type TFT 150 has a channel-forming region 152, source region153 and drain region 154 on the insular semiconductor layer 107. Thenn-channel type TFT 151 has a channel-forming region 155, an LDD region156 overlapping the gate electrode 177 (this LDD region will hereunderbe referred to as L_(ov)), a source region 157 and a drain region 158 onthe insular semiconductor layer 108. The length of the L_(ov) region inthe channel length direction is 0.5-3.0 μm (preferably 1.0-1.5 μm),compared to 3-8 μm for the channel length. In FIG. 2, each TFT has asingle gate structure, but it may be a double gate structure and thereis also no problem with a multigate structure comprising multiple gateelectrodes.

FIG. 7(C) shows a top view of FIG. 6(E). The source wirings 124, 125 arein contact with the insular semiconductor layer 107, 108 b with contactholes, not shown, provided on the interlayer insulating layer 123 andprotective insulating layer 122. In FIG. 7(C), cross-section A-A′corresponds to the cross-sectional structure shown in FIG. 6(E).

The p-channel type TFT 150 and n-channel type TFT 151 fabricated in thismanner are formed of a channel-forming region that is a single crystalgrain, or single crystal. As a result, since the current conveyingcharacteristics during operation of the TFT are not affected by grainboundary potential or trapping, it is possible to achieve propertiescomparable to a MOS transistor formed on a single crystal siliconsubstrate. This type of TFT can also be used to form a shift registercircuit, buffer circuit, D/A converter circuit, level shifter circuit,multiplexer circuit or the like. Appropriate combination of thesecircuits can applied to form various semiconductor devices fabricated onglass substrates, such as liquid crystal display devices, EL displaydevices or density image sensors.

Example 2

This example will be explained using FIG. 8 for fabrication of a groundlayer of a different form for the TFT fabricated in Example 1. The TFTcross-sectional structure shown in FIG. 8 is formed by the fabricationprocedure of Example 1, and the differences with respect to Example 1will be explained here.

In FIG. 8(A), an insulating layer 133 made of a silicon oxynitride filmfabricated by plasma CVD from SiH₄, N₂O and NH₃ is provided on thethermal conductive layer 102 and selectively formed first insulatinglayer 103, 104. This silicon oxynitride film is a silicon oxynitridefilm with an oxygen concentration of from 20 atomic % to 30 atomic % anda nitrogen concentration of from 20 atomic % to 30 atomic %, so that itis formed with almost equivalent oxygen and nitrogen contents. As aresult, the internal stress is reduced below that of a silicon nitridefilm, and the blocking property of the alkali metal element can beprovided. A second insulating layer 511 is further formed thereover. Thefirst insulating layer 103, 104 has a thickness of 50-500 nm, while theinsulating layer 133 is formed to a thickness of 50-200 nm. The thirdinsulating layer has the effect of alleviating stress, and as a resultexhibits an effect of inhibiting variation in the threshold voltage andS value of the TFT.

FIG. 8(B) shows a relatively smaller size for the first insulating layer134, 135 compared to the insular semiconductor layer 107, 108. Thecrystal grains of the first insulting layer are large-sized, and if thechannel-forming regions 152, 155 are situated in those sections, it ispossible to eliminate the crystal grain boundaries in thechannel-forming regions.

In FIG. 8(C), a trench is formed on the surface of the glass substrate136 on which the TFT is to be formed. The trench depth is 50-500 nm, andthis trench working can be easily accomplished by forming a photoresistmask with a desired pattern on the glass substrate surface and etchingwith an aqueous solution containing hydrogen fluoride (HF). A thermalconductive layer is formed on the surface on which the trench has beenformed. The thickness of the thermal conductive layer 137 is 50-500 nm.A first insulating layer is formed thereover to a thickness of 500-2000nm. Next, CMP (Chemical-Mechanical Polishing) is used to flatten thesurface. For example, the thermal conductive layer 137 is formed to athickness of 100 nm on the surface on which the trench has been formedto a depth of 200 nm. CMP is then used for flattening, whereby thethickness of the first insulating layer 138 may be adjusted to 500 nm atthe sections where the trench is formed, and 300 nm at the sectionswhere the trench is not formed. The polishing agent used for CMP on thesilicon oxynitride film used for the second insulating film may be, forexample, a dispersion of fumed silica particles, obtained by heatdecomposition of silicon chloride gas, in a KOH-added aqueous solution.A TFT is thus fabricated in the same manner as Example 1 on theflattened surface.

FIG. 8(D) shows a case where an n-channel type TFT 151 and p-channeltype TFT 150 are formed on one insular semiconductor layer 143 formed ona first insulating layer 140. The steps for fabrication of the TFTs arethe same, and by changing the layout pattern of the photomask used, itis possible to complete the structure shown in FIG. 8(D). As in FIG.6(D) for Example 1, the p-channel type TFT 150 has a channel-formingregion 152, a source region 153 and a drain region 154. The n-channeltype TFT 151 has a channel-forming region 155, an LDD region 156overlapping the gate electrode 157, a source region 157 and a drainregion 158. FIGS. 6 to 8 show cases where each TFT has a single gatestructure, but the structure of the gate electrode may also be adouble-gate structure and there is also no problem with a multigatestructure comprising multiple gate electrodes. By proximally positioningthe two TFTs in this manner, it is possible to reduce fluctuations inthe TFT characteristics and improve the degree of integration.

Example 3

This example illustrates a fabrication step for a CMOS circuitcomprising an n-channel type TFT and p-channel type TFT with a differentstructure than Example 1, with reference to FIGS. 27 and 28. The orderof steps and the permissible ranges for the fabrication conditions arethe same as in Example 1.

As shown in FIG. 27(A), a first insulating film 1502, a secondinsulating film 1503-1505 and a third insulating film are formed on aglass substrate 1501, in the same manner as Example 1. There are norestrictions on the size of the pattern-formed second insulating film,and the size of the second insulating film 1504 may be 50 μm×70 μm forformation of the insular semiconductor layer of 45 μm×65 μm (channellength direction length×channel width direction length) in a later step.An amorphous silicon film 1507 a is formed thereover.

Next, as shown in FIG. 27(B), a crystalline silicon film 1507 b isformed using the laser annealing explained for Embodiment 1. While thecrystal grains grow to a size of a few μm on the second insulating film,they do not necessarily need to be single crystal grains, and multiplecrystal grains may also be present.

Also, as shown in FIG. 27(C), a 45 μm×65 μm insular semiconductor layer1508 is formed on the second insulating film 1504 via a third insulatingfilm 1506. A mask layer 1509 is also formed. The steps shown from FIG.6(D) to FIG. 7(F) illustrate the steps for formation of a CMOS circuitby formation of an n-channel type TFT and p-channel type TFT with theinsular semiconductor layer 1508 as the active layer.

FIG. 27(D) is a channel doping step, wherein a resist mask 1510 isprovided and boron (B) is added by ion-doping in the region in which then-channel type TFT is to be formed. In FIG. 27(E), a resist mask 1511 isprovided to form an n-type impurity region 1512 to serve as the LDDregion of the n-channel type TFT. Also, as shown in FIG. 27(F), the masklayer 1509 is removed for laser activation treatment, to form a gateinsulating film 1513.

In FIG. 28(A), a conductive layer (A) 1514 and conductive layer (B) 1515are formed on the gate insulating film by sputtering. The preferredcombination for these conductive layers is a combination of TaN as theconductive layer (A) and Ta as the conductive layer (B), or acombination of WN as the conductive layer (A) and W as the conductivelayer (B). Also, gate electrodes 1516, 1517 are formed, as shown in FIG.28(B). The gate electrodes 1516, 1517 are composed of 1516 a, 1517 amade of conductive layer (A) and 1516 b, 1517 b made of conductive layer(B).

These gate electrodes are used as masks for auto-aligned formation of asource region and drain region by addition of an impurity element by iondoping. FIG. 28(C) is a step of forming a source region and drain regionof a p-channel type TFT, where a p-type impurity element is added by iondoping to form a p⁺ impurity region 1519. Here, the region in which then-channel type TFT is to be formed is covered with a resist mask 1518.FIG. 28(D) is a step of forming an n-channel type TFT source region anddrain region, where an n-type impurity element is added by ion doping toform an n⁺ impurity region 1521. Phosphorus (P) is also simultaneouslyadded to the impurity region 1519, but the since the concentration ofphosphorus (P) added to the impurity region 1520 is about ½ to ⅓ of theboron (B) concentration already added in the previous step, the p-typeconductivity is guaranteed so that there is no effect on the propertiesof the TFT.

Next, a protective insulating layer 1522 is formed as shown in FIG.28(E), and an activation step and hydrogenation step are carried out.After the steps of activation and hydrogenation have been completed, aninterlayer insulating film 1523 is formed by laminating a siliconoxynitride film or silicon oxide film on the protective insulating film.Contact holes are then formed reaching to the TFT source region or drainregion of the interlayer insulating film 1523 and protective insulatingfilm 1522, forming source wirings 1524, 1525 and a drain wiring 1526.Next, a silicon nitride film or silicon oxynitride film is formed to athickness of 50-500 nm (typically 100-300 nm) as a passivation film1527. Hydrogenation treatment in this state can provide desirableresults for improved TFT characteristics.

It is thereby possible to complete an n-channel type TFT 1551 andp-channel type TFT 1550 on the substrate 1501. The p-channel type TFT1550 has a channel-forming region 1552, a source region 1553 and a drainregion 1554. The n-channel type TFT 1551 has a channel-forming region1555, an LDD region 1556 overlapping the gate electrode 1517, a sourceregion 1557 and a drain region 1558. FIG. 28 shows a case where each TFThas a single gate structure, but it may also be a double-gate structureand there is also no problem with a multigate structure comprisingmultiple gate electrodes.

It is thus possible to form an insular semiconductor layer 1508 on oneinsularly formed second insulating layer 1504, and to form two TFTsusing the insular semiconductor layer 1508. The two TFTs can thus beproximally situated to allow reduced TFT characteristic variation andimproved integration.

Example 4

FIGS. 9 to 13 will now be used to explain the details of the steps of aprocess whereby a pixel TFT in a display area and a driving circuit TFTformed around the display area, are fabricated on the same substrate. Tosimplify the explanation, however, the control circuit will beillustrated with a shift register circuit, a CMOS circuit as the basiccircuit, such as a buffer circuit, and an n-channel type TFT forming asampling circuit.

For FIG. 9(A), a barium borosilicate glass substrate oralmuminoborosilicate glass substrate may be used as the substrate 201.In this embodiment, an aluminoborosilicate glass substrate was used. Onthe surface of the substrate 201 on which the TFT is to be formed, thereis formed a thermal conductive layer 202 of aluminum nitride (AlN) to athickness of 50 nm. An insularly worked first insulating layer 203-206made of silicon oxynitride is formed thereover to a thickness of 200 nm.A second insulating layer 207 made of silicon oxynitride is then formedthereover to a thickness of 100 nm. Thus, a thermal conductive layer202, first insulating layer 203-206 and second insulating layer 207 arelaminated as the ground layer.

Next, a semiconductor layer 208 a having an amorphous structure with athickness of 25-80 nm (preferably 30-60 nm) is formed by a publiclyknown method such as plasma CVD or sputtering. In this example, anamorphous silicon film was formed to a thickness of 55 nm by plasma CVD.Semiconductor films with amorphous structures include amorphoussemiconductor films and fine crystalline semiconductor films, and acompound semiconductor film with an amorphous structure, such as anamorphous silicon-germanium film, may also be used. Since the secondinsulating film 207 and the amorphous silicon film 208 a can be formedby the same film forming method, they both may be made by continuousformation. After forming the second insulating film, contamination ofthe surface can be prevented by once removing it from the airatmosphere, thus reducing fluctuation of the characteristics andvariation in the threshold voltage of the fabricated TFT.

A crystalline silicon film 208 b is then formed from the amorphoussilicon film 208 a. This is accomplished by the laser annealing methodof the invention, as explained for Embodiment 1. Alternatively, heatannealing and laser annealing may be combined by the technique disclosedin Japanese Laid-Open Patent Publication No. 130652 of 1995 mentionedfor Embodiment 3, to form a crystalline silicon film 208 b. When laserannealing is used, a laser annealing apparatus such as shown in FIG. 21,with an XeCl excimer laser (wavelength: 308 nm) as the laser lightemitting device, is used to form a linear beam with an optical system,and irradiation is performed with an oscillation frequency of 5-50 Hz,an energy density of 100-500 mJ/cm² and a linear beam overlap of 80-98%.A crystalline silicon film 208 b is thereby obtained (FIG. 9(B)).

The crystalline silicon film 208 b is then subjected to etchingtreatment for division into islands, to form an insular semiconductorlayer 209, 210 a-212 a as the active layer. Next, a mask layer 213 isformed by a silicon oxide film with a thickness of 50-100 nm by plasmaCVD, reduced pressure CVD or sputtering. By reduced pressure CVD, forexample, a mixed gas of SiH₄ and O₂ is used to form a silicon oxide filmwith heating at 400° C. under 266 Pa (FIG. 9(C)).

For the channel doping step, a photoresist mask 214 is provided andboron (B) is added as a p-type impurity element to a concentration ofabout 1×10¹⁶ to 5×10¹⁷ atoms/cm³ for the purpose of controlling thethreshold voltage over the entire surface of the insular semiconductorlayer 210 a-212 a on which the n-channel type TFT is to be formed. Theaddition of boron (B) may be accomplished by ion doping, and it may alsobe simultaneously added with formation of the amorphous silicon film.The boron (B) addition is not always necessary, but it was found to bepreferable to form a semiconductor layer 210 b-212 b containing boron(B) to limit the threshold voltage of the n-channel type TFT to withinthe prescribed range.

For formation of the n-channel type TFT LDD region of the drivingcircuit, an n-type impurity element is selectively added to the insularsemiconductor layer 210 b, 211 b. A photoresist mask 215-218 is formedbeforehand. In this case ion doping was applied using phosphine (PH₃) inorder to add phosphorus (P). The phosphorus (P) concentration of theformed impurity region (n⁻) 219, 220 is in the range of 1×10¹⁷ to 5×10¹⁹atoms/cm³ (FIG. 10(A)). The impurity region 221 is a semiconductor layerfor formation of the holding capacitance of the display area, andphosphorus (P) is added to the same concentration in this region aswell.

This is followed by a step of removing the mask layer 213 withhydrofluoric acid or the like to activate the impurity element added inFIG. 9(D) and FIG. 10(A). The activation may be carried out by a methodsuch as heat annealing for 1-4 hours at 500-600° C. in a nitrogenatmosphere, or by a different method such as laser annealing. Bothmethods may also be used in combination. In this example, a laseractivating method was used, with a KrF excimer laser (wavelength: 248nm) employed to form a linear beam at an oscillation frequency of 5-50Hz, an energy density of 100-500 mJ/cm² and scanning with a linear beamoverlap of 80-98%, for treatment of the entire surface of the substrateon which the insular semiconductor layer had been formed. There are noparticular restrictions on the laser light irradiation conditions, andthey may be appropriately determined by the operator.

A gate insulating film 222 is formed of an insulating film containingsilicon to a film thickness of 40-150 nm using plasma CVD or sputtering.For example, it may be formed with a silicon oxynitride film fabricatedby plasma CVD with, for example, SiH₄, N₂O and O₂ as the startingmaterials.

A first conductive layer is then formed to make the gate electrode. Inthis example, conductive layer (A) 223 made of a conductive metalnitride film was laminated with a conductive layer (B) 224 made of ametal film. Here, the conductive layer (B) 224 was formed to a thicknessof 250 nm with tantalum (Ta) by sputtering with Ta as the target, andthe conductive layer (A) 223 was formed to a thickness of 50 nm withtantalum nitride (TaN) (FIG. 10(C)).

Next, a photoresist mask 225-229 is formed, and the conductive layer (A)223 and conductive layer (B) 224 are etched together to form gateelectrodes 230-233 and capacity wiring 234. The gate electrodes 230-233and capacity wiring 234 are formed by integration of 230 a-234 a made ofthe conductive layer (A) and 230 b-234 b made of the conductive layer(B). Here, the gate electrodes 231, 232 formed in the driving circuitare formed to overlap with a portion of the impurity regions 219, 220via the gate insulating film 222. (FIG. 10(D)).

This is followed by a step of adding a p-type impurity element to form asource region and drain region for the p-channel type TFT of the drivingcircuit. Here, the gate electrode 230 is used as a mask to form aself-aligning impurity region. The region in which the n-channel typeTFT is to be formed is covered with a photoresist mask 235. The impurityregion (p⁺) 234 was formed by an ion doping method using diborane(B₂H₆), to a concentration of 1×10²¹ atoms/cm³ (FIG. 11(A)).

Next, an impurity region to function as a source region or drain regionwas formed in n-channel type TFT. A resist mask 237-239 was formed, andan n-type impurity element was added to form impurity regions 241-244.This was accomplished by an ion doping method using phosphine (PH₃), andthe phosphorus (P) concentration in the impurity regions (n⁺) 241-244was 5×10²⁰ atoms/cm³ (FIG. 11(B)). Boron. (B) is already included in theimpurity region 240 due to addition in the previous step, but sincephosphorus (P) is added to about ½ to ⅓, the influence of the phosphorus(P) may be ignored, and there is no effect on the properties of the TFT.

For formation of the n-channel type TFT LDD region of the display area,a step of adding an n-type impurity element was carried out. Here, thegate electrode 233 was used as a mask for self-aligning addition of ann-type impurity element by ion doping. The concentration of the addedphosphorus (P) was 5×10¹⁶ atoms/cm³, and since the addition is to alower concentration than the concentration of the impurity element addedin FIG. 9(A) and FIGS. 10(A) and (B), substantially only impurityregions (n⁻⁻) 245, 246 are formed (FIG. 11(C)).

This was followed by a step of heat annealing for activation of then-type or p-type impurity element added in to their respectiveconcentrations. This step can be accomplished by heat annealing using afurnace annealer, or by laser annealing or rapid thermal annealing(RTA). Here, the activation step was carried out by furnace annealing.The heat treatment is generally accomplished in a nitrogen atmospherewith an oxygen concentration of no greater than 1 ppm, at 400-700° C.and typically 500-600° C., and for this example, heat treatment wascarried out at 550° C. for 4 hours.

In this heat annealing, the Ta film 230 b-234 b for formation of thegate electrodes 230-233 and capacity wiring 234 is formed as aconductive layer (C) 230 c-234 c comprising TaN to a thickness of 5-80nm from the surface. When the conductive layer (B) 230 b-234 b, tungstennitride (WN) may be formed, and when it is titanium (Ti), titaniumnitride (TiN) may be formed. It may be formed in the same manner evenwhen the gate electrodes 230-234 are exposed to a plasma atmospherecontaining nitrogen, using nitrogen or ammonia. There was also performeda step of heat annealing for 1-12 hours at 300-450° C. in an atmospherecontaining 3-100% hydrogen, for hydrogenation of the insularsemiconductor layer. This step is a step for terminating the 10¹⁶-10¹⁸cm³ dangling bond of the insular semiconductor layer by thermallyexcited hydrogen. Plasma hydrogenation (using plasma-excited hydrogen)may also be carried out as another means for hydrogenation.

When a catalyst element that aids crystallization of silicon is used inthe crystallization step and no subsequent gettering step is carried outas explained for Embodiment 3, a trace amount of the catalyst elementremains in the insular semiconductor layer (about 1×10¹⁷-1×10¹⁹atoms/cm³). While the TFT can of course still be completed even in thatstate, it was found preferable to at least remove the residual catalystelement from the channel-forming region. One means of removing thecatalyst element was a technique utilizing the gettering effect ofphosphorus (P). The phosphorus (P) concentration required for getteringis sufficient if it is roughly equivalent to that of the impurity region(n⁺) formed in FIG. 10(B), and the heat annealing of the activation stepcarried out here allowed segregation of the catalyst element from thechannel-forming regions of the n-channel type TFT and p-channel type TFTinto the impurity regions 240-244, for gettering. As a result, thecatalyst element was segregated at about 1×10¹⁷-1×10¹⁹ atoms/cm³ in theimpurity regions 240-244 (FIG. 11(D)).

FIG. 14(A) and FIG. 15(A) are top views of the TFT of FIG. 11(D), wherecross-section A-A′ and cross-section C-C′ correspond to A-A′ and C-C′ inFIG. 11(D). Cross-section B-B′ and cross-section D-D′ correspond to thecross-sectional views of FIG. 16(A) and FIG. 17(A). The top views ofFIG. 14 and FIG. 15 omit the gate insulating films, but up to this step,the gate electrodes 230, 231, 233 and capacity wiring 234 are formed onthe insular semiconductor layers 209, 210, 212 formed on the secondinsulating layer 203, 204, 206, as shown.

After completion of the steps of activation and hydrogenation, thesecond conductive layer to serve as the gate wiring is formed. Thissecond conductive layer is formed with a conductive layer (D) composedmainly of aluminum (Al) or copper (Cu) as low resistance materials. Ineither case, the resistivity of the second conductive layer is about0.1-10 μΩcm. A conductive layer (E) made of titanium (Ti), tantalum(Ta), tungsten (W) or molybdenum (Mo) may also be formed by lamination.In this example, the conductive layer (D) 247 was an aluminum (Al) filmcontaining 0.1-2 wt % titanium (Ti), and the conductive layer (E) 248was a titanium (Ti) film. The conductive layer (D) 247 may be formed to200-400 nm (preferably 250-350 nm), and the conductive layer (E) 248 maybe formed to 50-200 nm (preferably 100-150 nm) (FIG. 12(A)).

The conductive layer (E) 248 and conductive layer (D) 247 were subjectedto etching treatment to form the gate wiring connecting the gateelectrodes, thus forming gate wirings 249, 250 and capacity wiring 251.The etching treatment first accomplished removal from the surface of theconductive layer (E) to partway through the conductive layer (D) by adry etching method using a mixed gas of SiCl₄, Cl₂ and BCl₃, and thenwet etching was performed with a phosphoric acid-based etching solutionto remove the conductive layer (D), thus allowing formation of a gatewiring while maintaining selective working with the ground layer.

FIG. 14(B) and FIG. 15(B) are top views of this state, wherecross-section A-A′ and cross-section C-C′ correspond to A-A′ and C-C′ inFIG. 12(B). Cross-section B-B′ and cross-section D-D′ correspond to theB-B′ and D-D′ in FIG. 16(B) and FIG. 17(B). In FIG. 14(B) and FIG.15(B), part of the gate wirings 249, 250 overlap and are in electricalcontact with part of the gate electrodes 230, 231, 233. This conditionis clearly shown in the cross-sectional structural diagrams of FIG.16(B) and FIG. 17(B) corresponding to cross-section B-B′ andcross-section D-D′, where conductive layer (C) forming the firstconductive layer and conductive layer (D) forming the second conductivelayer are in electrical contact.

A first interlayer insulating film 252 is formed with a silicon oxidefilm or silicon oxynitride film to a thickness of 500-1500 nm. In thisexample, it was formed with SiH₄ at 27 SCCM, N₂O at 900 SCCM, a reactionpressure of 160 Pa, a substrate temperature of 325° C. and a dischargecurrent density of 0.15 W/cm². Next, contact holes are formed reachingto the source region or drain region formed in each insularsemiconductor layer, to form source wirings 253-256 and drain wirings257-260. While not shown here, in this example the electrode has athree-layer laminated structure with continuous formation of a Ti filmto 100 nm, a Ti-containing aluminum film to 300 nm and a Ti film to 150nm by sputtering.

Next, a silicon nitride film, silicon oxide film or a silicon oxynitridefilm is formed to a thickness of 50-500 nm (typically 100-300 nm) as apassivation film 261. Hydrogenation treatment in this state gavefavorable results for enhancement of the TFT characteristics. Forexample, heat treatment may be carried out for 1-12 hours at 300-450° C.in an atmosphere containing 3-100% hydrogen, or a similar effect may beachieved by using a plasma hydrogenation method. Such heat treatment canaccomplish hydrogenation by diffusion of the hydrogen present in thefirst interlayer insulating film 252 into the insular semiconductorlayer 209, 210 b-212 b. In any case, it is preferred to reduce thedefect density of the insular semiconductor layer 107, 108 b to under10¹⁶/cm³, and it was found that inclusion of hydrogen to 0.01-0.1 atomic% was satisfactory for this purpose (FIG. 12(C)). Here, an opening maybe formed in the passivation film 261 at the position where the contactholes are to be formed for connection of the pixel electrodes and thedrain wirings.

FIG. 14(C) and FIG. 15(C) show top views of this condition, wherecross-section A-A′ and cross-section C-C′ correspond to A-A′ and C-C′ inFIG. 12(C). Cross-section B-B′ and cross-section D-D′ correspond to B-B′and D-D′ in FIG. 16(C) and FIG. 17(C). FIG. 14(C) and FIG. 15(C) do notshow the first interlayer insulating film, but the source wirings 253,254, 256 and drain wirings 257, 258, 260 in the source and drain regions(not shown) of the insular semiconductor layer 209, 210, 212 areconnected via contact holes formed in the first interlayer insulatingfilm.

Next, a second interlayer insulating film 262 made of an organic resinis formed to a thickness of 1.0-1.5 μm. The organic resin used may bepolyimide, acryl, polyamide, polyimide amide, BCB (benzocyclobutene) orthe like. Here, after coating onto the substrate, a thermalpolymerization type polyimide was used for formation by firing at 300°C. A contact hole reaching to the drain wiring 260 is then formed in thesecond interlayer insulating film 262, and pixel electrodes 263, 264 areformed. The pixel electrodes used may be of a transparent conductivefilm in the case of a transmitting liquid crystal display device, or ofa metal film in the case of a reflective liquid crystal display device.In this example a transmitting liquid crystal display device was used,and therefore an indium-tin oxide (ITO) film was formed by sputtering toa thickness of 100 nm (FIG. 13).

A substrate with a driving circuit TFT and a display area image TFT onthe same substrate was completed in this manner. A p-channel type TFT301, a first n-channel type TFT 302 and a second n-channel type TFT 303were formed on the driving circuit and a pixel TFT 304 and a holdingcapacity 305 were formed on the display area. Throughout the presentspecification, this substrate will be referred to as an active matrixsubstrate for convenience.

The p-channel type TFT 301 of the driving circuit has a channel-formingregion 306, source regions 307 a, 307 b and drain regions 308 a, 308 bin the insular semiconductor layer 209. The first n-channel type TFT 302has a channel-forming region 309, an LDD region (L_(ov)) 310 overlappingthe gate electrode 231, a source region 311 and a drain region 312 inthe insular semiconductor layer 210. The length of this L_(ov) region inthe channel length direction was 0.5-3.0 μm, and is preferably 1.0-1.5μm. The second n-channel type TFT 303 has a channel-forming region 313and an L_(ov) region and L_(off) region (an LDD region not overlappingthe gate electrode 130, hereunder referred to as L_(off) region) formedin the insular semiconductor layer 211, and the length of this L_(off)region in the channel length direction is 0.3-2.0 μm, and preferably0.5-1.5 μm. The pixel TFT 304 has channel-forming regions 318, 319,L_(off) regions 320-323 and source or drain regions 324-326 in theinsular semiconductor layer 212. The length of the L_(off) regions inthe channel length direction is 0.5-3.0 μm, and preferably 1.5-2.5 μm.The capacity wirings 234, 251 and an insulating film made of the samematerial as the gate insulating film are connected to the drain region326 of the pixel TFT 304, while a holding capacity 305 is formed from ann-type impurity element-added semiconductor layer 327. In FIG. 12 thepixel TFT 304 has a double gate structure, but it may also have a singlegate structure, and there is no problem with a multigate structureprovided with multiple gate electrodes.

This construction optimizes the structures of the TFTs of each circuitin accordance with the specifications required for the pixel TFT anddriving circuit, thus allowing the operating performance and reliabilityof the semiconductor device to be improved. In addition, by forming thegate electrodes with a heat resistant conductive material, it ispossible to facilitate activation of the LDD regions and source anddrain regions, and thus adequately reduce wiring resistance by formationof the gate wirings with low resistance materials. This allowsapplication to display devices having display areas (screen sizes) inthe class of 4 inches and larger. In addition, by using a crystallinesilicon film with a single crystal structure selectively formed on thefirst insulating layer 203-206 on which the ground layer is to beformed, it is possible to realize a completed TFT as an n-channel typeTFT with an S value between 0.10 V/dec and 0.30 V/dec, a V_(th) between0.5 V and 2.5 V and a field effect mobility of at least 300 cm²/V·sec.It is also possible to realize a p-channel type TFT with an S valuebetween 0.10 V/dec and 0.30 V/dec, a V_(th) between −0.5 V and −2.5 Vand a field effect mobility of at least 200 cm²/V·sec.

Example 5

In this example, the steps for fabricating an active matrix-type liquidcrystal display device from the active matrix substrate fabricated inExample 4 will be explained. As shown in FIG. 19, an orientation film601 is formed on an active matrix substrate in the state shown in FIG.13. A polyimide resin is often used as the orientation film for mostliquid crystal display elements. On the opposing substrate 602 on theopposite side there are formed a non-transparent film 603, a transparentconductive film 604 and an oriented film 605. After forming the orientedfilm, it is subjected to rubbing treatment so that the liquid crystalmolecules are oriented with a consistent pretilt angle. The pixelsection and the substrate opposite the active matrix substrate on whichthe CMOS circuit has been formed are attached together through a sealingmaterial or spacer (neither shown) by a publicly known cell joiningstep. Next, a liquid crystal material 606 is injected between bothsubstrates and complete sealing is accomplished with a sealant (notshown). The liquid crystal material used may be any publicly knownliquid crystal material. This completes the active matrix-type liquidcrystal display device shown in FIG. 19.

The structure of this active matrix-type liquid crystal display devicewill now be explained with reference to the perspective view in FIG. 20and the top view in FIG. 21. The same numerals are used in FIGS. 20 and21 for correspondence with the cross-sectional structural diagrams ofFIGS. 9 to 13 and FIG. 19. The cross-sectional structure along E-E′ inFIG. 21 corresponds to the cross-sectional diagram of the pixel matrixcircuit shown in FIG. 13.

In FIG. 20, the active matrix substrate is constructed of a pixelsection 406, a scanning signal driving circuit 404 and an image signaldriving circuit 405 formed on a glass substrate 201. A pixel TFT 304 isprovided in the display area, and the driving circuit provided around itis constructed based on a CMOS circuit. The scanning signal drivingcircuit 404 and the image signal driving circuit 405 are each connectedto the pixel TFT 304 with a gate wiring 250 and source wiring 256. Also,an FPC (flexible printed circuit) 731 is connected to an external I/Oterminal 734 and is connected to each driving circuit with input wirings402, 403.

FIG. 21 is a top view showing about one pixel portion of the displayarea 406. The gate wiring 250 crosses with the semiconductor layer 212under it via a gate insulating film (not shown). Also not shown on thesemiconductor layer are a source region, drain region and an L_(off)region as an n⁻ region. A connector 256 is present between the sourcewiring 256 and the source region 324, a connector 266 is present betweenthe drain wiring 260 and the drain region 326, and a connector 267 ispresent between the drain wiring 260 and the pixel electrode 263. Aholding capacity 305 is formed in the region where the semiconductorlayer 327 extending from the drain region 326 of the pixel TFT 304overlaps with the capacity wirings 234, 251 via a gate insulating film.The active matrix-type liquid crystal display device of this embodimentwas explained with the structure of Example 4, but this is not limitedto the structure of Example 4, as an active matrix-type liquid crystaldisplay device may also be completed using the construction shown inEmbodiments 1-3 in application to Example 4. In any case, an activematrix substrate provided with the ground layer illustrated byEmbodiment 1 can be freely combined therewith to fabricate an activematrix-type liquid crystal display device.

Example 6

FIG. 18 is an illustration showing one arrangement of the I/O terminal,display area and driving circuit of a liquid crystal display device. Thedisplay area 406 has m gate wirings and n source wirings crossing in amatrix fashion. For example, when the pixel density is VGA, 480 gatewirings and 640 source wirings are formed, and for XGA 768 gate wiringsand 1024 source wirings are formed. The screen size of the display areahas a diagonal length of 340 mm in the case of a 13-inch class display,and 460 mm in the case of an 18-inch class display. In order to realizesuch a liquid crystal display device it is necessary to form the gatewirings with a low resistance material as indicated for Example 3. Asthe time constant for the gate wiring (resistance×volume) increases theresponse speed of the scanning signal is delayed, making it impossibleto drive the liquid crystals at high speed. For example, if theresistivity of the material forming the gate wiring is 100 μΩcm thelimit to the screen size will be about 6 inch class, but for 3 μΩcm ascreen size of 27 inch class is possible.

A scanning signal driving circuit 404 and an image signal drivingcircuit 405 are provided around the display area 406. Since the lengthsof these driving circuit gate wirings are also necessarily longer withincreasing size of the screen of the display area, the gate wirings arepreferably formed of a low resistance material such as aluminum (Al) orcopper (Cu) as indicated for Example 4, in order to realize large-sizedscreens. According to the invention, the input wirings 402, 403connecting from the input terminal 401 to each driving circuit may beformed of the same material as the gate wirings, and they can contributeto the lower wiring resistance.

On the other hand, when the screen size of the display area is a 0.9inch class, the diagonal length is about 24 mm, and if the TFT isfabricated on a submicron rule it will be housed within 30×30 mm²including the driving circuit provided around it. In such cases, it isnot always necessary to form the gate wirings of the low resistancematerial indicated for Example 4, and the gate wirings may instead beformed of the same material as the material used to form the gateelectrodes, such as Ta or W.

A liquid crystal display device with this construction may also becompleted using an active matrix substrate completed by thecrystallization method explained for Embodiments 1-3 in application toExample 4. In any case, an active matrix substrate completed by thecrystallization technique explained for Embodiments 1-3 can be freelycombined therewith to fabricate an active matrix-type liquid crystaldisplay device.

Example 7

In this example, FIG. 24 will be used for explanation of the inventionas applied to an active matrix-type organic electroluminescent (organicEL) material employed in a display device (organic EL display device).FIG. 24(A) shows a circuit diagram of an active matrix-type organic ELdisplay device. This organic EL display device comprises a display area11, an X-direction peripheral driving circuit 12 and a Y-directionperipheral driving circuit 13 provided on the substrate. The displayarea 11 is composed of a switching TFT 330, a holding capacity 332, acurrent controlling TFT 331, an organic EL element 333, X-directionsignal lines 18 a, 18 b, power lines 19 a, 19 b, Y-direction signallines 20 a, 20 b, 20 c, etc.

FIG. 24(B) shows a top view of approximately one pixel portion. Theswitching TFT 330 is formed in the same manner as the p-channel type TFT301 shown in FIG. 13, and the current controlling TFT 331 is formed inthe same manner as the n-channel type TFT 303.

Incidentally, in the case of an organic EL display apparatus inoperating mode where light is emitted toward the top of the TFT, thepixel electrode is formed of a reflective electrode such as Al. Thestructure shown here is that of the pixel region of an organic ELdisplay device, but it is also possible to employ a peripheralcircuit-integral active matrix-type display device with the drivingcircuit provided around the pixel region, as in Example 1. A colorfilter, not shown, may also be provided for color display. In any case,the active matrix substrate provided with the ground layer illustratedby Embodiment 1 can be freely combined therewith to fabricate an activematrix-type organic EL display device.

Example 8

An active matrix substrate and liquid crystal display device or ELdisplay device fabricated according to the present invention may be usedfor a variety of electro-optical devices. The invention may also beapplied to any electronic instrument incorporating such anelectro-optical device as a display medium. As electronic instrumentsthere may be mentioned personal computers, digital cameras, videocameras, portable data terminals (mobile computers, cellular phones,electronic books, etc.), navigation systems, and the like. Examples ofthese are shown in FIG. 25.

FIG. 25(A) is a personal computer, which is constructed with a main body2001 provided with a microprocessor or memory, an image input device2002, a display device 2003 and a keyboard 2004. A TFT fabricated usinga crystalline semiconductor film fabricated by laser annealing accordingto the invention may be used to form the display device 2003 or theother signal processing circuits.

FIG. 25(B) is a video camera, which is constructed with a main body2101, a display device 2102, a voice input device 2103, an operatingswitch 2104, a battery 2105 and an image receiving device 2106. A TFTfabricated using a crystalline semiconductor film fabricated by laserannealing according to the invention may be applied to the displaydevice 2102 or the other signal control circuits.

FIG. 25(C) is a portable data terminal, which is constructed with a mainbody 2201, an image input device 2202, an image receiving device 2203,an operating switch 2204 and a display device 2205. A TFT fabricatedusing a crystalline semiconductor film fabricated by laser annealingaccording to the invention may be applied to the display device 2205 orthe other signal control circuits.

FIG. 25(D) is an electronic game device for TV games or video games, andit is constructed with a body 2301 housing an electronic circuit 2308such as a CPU and a recording medium 2304, a controller 2305, a displaydevice 2303, and a display device 2302 incorporated into the body 2301.The display device 2303 and the display device 2302 incorporated intothe body 2301 may display the same information, or the former may serveas the main display device and the latter as the secondary device, fordisplay of information on the recording medium 2304, display of theoperating state of the device, or as an operating board if provided witha touch sensor function. The body 2301, controller 2305 and displaydevice 2303 may have a wire linkup for transmission of signals betweenthem, or sensors 2306, 2307 may be provided for wireless transmission oroptical transmission. A TFT fabricated using a crystalline semiconductorfilm fabricated by laser annealing according to the invention may beused in the display devices 2302, 2303. The display device 2303 used maybe a conventional CRT.

FIG. 25(E) is a player used for program-recorded recording media(hereunder referred to simply as recording media), and it is constructedwith a main body 2401, a display device 2402, a speaker 2403, arecording medium 2404 and an operating switch 2405. The recording mediumused may be a DVD (Digital Versatile Disc) or compact disc (CD), andthis allows music program reproduction and image display, as well asdisplay of data for video games (or TV games) and through the internet.A TFT fabricated using a crystalline semiconductor film fabricated bylaser annealing according to the invention may be advantageously usedfor the display device 2402 or other signal control circuits.

FIG. 25(F) is a digital camera, which is constructed with a main body2501, a display device 2502, an eyepiece 2503, an operating switch 2504and an image receiver (not shown). A TFT fabricated using a crystallinesemiconductor film fabricated by laser annealing according to theinvention may be applied to the display device 2502 or other signalcontrol circuits.

FIG. 26(A) a front projector, which is constructed with a light sourceoptical system and display device 2601 and a screen 2602. The presentinvention may be applied to the display device or to the other signalcontrol circuits. FIG. 26(B) is a rear projector, which is constructedwith a body 2701, a light source optical system and display device 2702,a mirror 2703 and a screen 2704. A TFT fabricated using a crystallinesemiconductor film fabricated by laser annealing according to theinvention may be applied to the display device or other signal controlcircuits.

FIG. 26(C) shows an example of the construction of a light sourceoptical system and display device 2601, 2702 for FIG. 26(A) and FIG.26(B). The light source optical system and display device 2601, 2702 isconstructed with a light source optical system 2801, mirrors 2802,2804-2806, dichroic mirror 2803, beam splitter 2807, liquid crystaldisplay device 2808, phase contrast panel 2809 and projection opticalsystem 2810. The projection optical system 2810 is constructed withmultiple optical lenses. FIG. 26(C) shows a three-panel type using threeliquid crystal display devices 2808, but there is no limit to this typeof system, and the construction may employ a single-panel type opticalsystem instead. The light path indicated by the arrow in FIG. 26(C) mayalso be provided with an appropriate optical lens, or film with apolarizing function, film for phase adjustment, IR film or the like.FIG. 26(D) shows an example of a structure for the light source opticalsystem 2801 of FIG. 26(C). In this example, the light source opticalsystem 2801 is constructed with a reflector 2811, light source 2812,lens array 2813, 2814, polarization altering element 2815 and converginglens 2816. The light source optical system shown in FIG. 26(D) is onlyone instance and there is no limitation to the construction shown.

While not shown here, the present invention may also be applied tonavigation systems and to reading circuits of image sensors. Thus, thescope of the present invention is very wide and it can be applied toelectronic instruments in a variety of fields. The electronicinstruments for these examples can also be realized using constructionswith any combination of Examples 1 to 7, employing the crystallizationtechniques according to Embodiments 1 to 3.

By using the crystallization technique of the present invention it ispossible to fabricate a crystalline semiconductor film with controlledlocations and sizes of the crystal grains. By thus forming the crystalgrains of the crystalline semiconductor film to match the TFTchannel-forming regions, it is possible to form at least thechannel-forming regions with single crystal grains, and to obtaincharacteristics substantially comparable to a TFT fabricated with singlecrystal semiconductor films.

Also, by forming the thermal conductive layer with a translucentinsulating material, it is possible to eliminate the parasitic volume ofthe back channel in a top-gate TFT, while application to varioussemiconductor devices such as EL display devices and image sensors,including transmission liquid crystal display devices, will allowdesigns that can give these semiconductor devices greater functionality.

What is claimed is:
 1. A method for fabrication of a semiconductordevice comprising the steps of: forming a translucent, insulatingthermal conductive layer with a thermal conductivity of 10 Wm⁻¹K⁻¹ orgreater over a surface of a substrate, forming a first insulating layerwith a thermal conductivity of less than 10 Wm⁻¹K⁻¹ at a selectedportion on said thermal conductive layer, forming an amorphoussemiconductor film on said thermal conductive layer and said firstinsulating layer, crystallizing said amorphous semiconductor film toselectively form a semiconductor film comprising single crystal grainson said first insulating layer, and hydrogenating said semiconductorfilm to form a semiconductor film comprising hydrogen-added singlecrystal grains.
 2. A method for fabrication of a semiconductor deviceaccording to claim 1, wherein a second insulating layer is formed onsaid thermal conductive layer and said first insulating layer.
 3. Amethod for fabrication of a semiconductor device according to claim 1,wherein a hydrogen-added semiconductor film is formed in contact withsaid second insulating layer, over at least said first insulating layer.4. A method for fabrication of a semiconductor device according to claim1, wherein said crystallization is carried out by irradiating a laserlight.
 5. A method for fabrication of a semiconductor device accordingto claim 1, wherein said thermal conductive layer comprises at least oneelement selected from the group consisting of aluminum oxide, aluminumnitride, aluminum oxynitiride, silicon nitride and boron nitride.
 6. Amethod for fabrication of a semiconductor device according to claim 1,wherein said thermal conductive layer comprises a material containing atleast one element selected from the group consisting of Si, N, O, Al andrare earth elements.
 7. A method for fabrication of a semiconductordevice according to claim 1, wherein said first insulating layer is asilicon oxynitride film comprising oxygen at a concentration from 55atomic % to 70 atomic % and nitrogen at a concentration from 1 atomic %to 20 atomic %.
 8. A method for fabrication of a semiconductor deviceaccording to claim 2, wherein said second insulating layer is a siliconoxynitride film comprising oxygen at a concentration from 55 atomic % to70 atomic % and nitrogen at a concentration from 1 atomic % to 20 atomic%.
 9. A method for fabrication of a semiconductor device according toclaim 1, wherein said semiconductor device is a display device employingan electroluminescence material.
 10. A method for fabrication of asemiconductor device according to claim 1, wherein said semiconductordevice is selected from the group consisting of a personal computer, avideo camera, a portable data terminal, a digital camera, a digitalvideo disk player, an electronic game equipment and a projector.
 11. Amethod for fabrication of a semiconductor device comprising the stepsof: forming a translucent, insulating thermal conductive layer with athermal conductivity of 10 Wm⁻¹K⁻¹ or greater over a surface of asubstrate, forming a first insulating layer with a thermal conductivityof less than 10 Wm⁻¹K⁻¹ at a selected portion on said thermal conductivelayer, forming an amorphous semiconductor film on said thermalconductive layer and said first insulating layer, crystallizing saidamorphous semiconductor film to selectively form a semiconductor filmhaving multiple crystal grains on said thermal conductive layer andcomprising single crystal grains on said first insulating layer, andhydrogenating said semiconductor film to form a hydrogen-addedsemiconductor film comprising single crystal grains on said firstinsulating layer.
 12. A method for fabrication of a semiconductor deviceaccording to claim 11, wherein a second insulating layer is formed onsaid thermal conductive layer and said first insulating layer.
 13. Amethod for fabrication of a semiconductor device according to claim 11,wherein a hydrogen-added semiconductor film is formed in contact withsaid second insulating layer, over at least said first insulating layer.14. A method for fabrication of a semiconductor device according toclaim 11, wherein said crystallization is carried out by irradiating alaser light.
 15. A method for fabrication of a semiconductor deviceaccording to claim 11, wherein said thermal conductive layer comprisesat least one element selected from the group consisting of aluminumoxide, aluminum nitride, aluminum oxynitride, silicon nitride and boronnitride.
 16. A method for fabrication of a semiconductor deviceaccording to claim 11, wherein said thermal conductive layer comprises amaterial containing at least one element selected from the groupconsisting of Si, N, O, Al and rare earth elements.
 17. A method forfabrication of a semiconductor device according to claim 11, whereinsaid first insulating layer is a silicon oxynitride film comprisingoxygen at a concentration from 55 atomic % to 70 atomic % and nitrogenat a concentration from 1 atomic % to 20 atomic %.
 18. A method forfabrication of a semiconductor device according to claim 12, whereinsaid second insulating layer is a silicon oxynitride film comprisingoxygen at a concentration from 55 atomic % to 70 atomic % and nitrogenat a concentration from 1 atomic % to 20 atomic %.
 19. A method forfabrication of a semiconductor device according to claim 11, whereinsaid semiconductor device is a display device employing anelectroluminescence material.
 20. A method for fabrication of asemiconductor device according to claim 11, wherein said semiconductordevice is selected from the group consisting of a personal computer, avideo camera, a portable data terminal, a digital camera, a digitalvideo disk player, an electronic game equipment and a projector.
 21. Amethod for fabrication of a semiconductor device having at least one TFTprovided over a substrate, said method comprising the steps of: forminga translucent, insulating thermal conductive layer with a thermalconductivity of 10 Wm⁻¹K⁻¹ or greater over a surface of a substrate;forming a first insulating layer with a thermal conductivity of lessthan 10 Wm⁻¹K⁻¹ at a selected portion on said thermal conductive layer;forming an amorphous semiconductor film on said thermal conductive layerand said first insulating layer; crystallizing said amorphoussemiconductor film to selectively form a semiconductor film comprisingsingle crystal grains on said first insulating layer; and hydrogenatingsaid semiconductor film to form a semiconductor film comprisinghydrogen-added single crystal grains, wherein a channel-forming regionof said TFT is formed in said hydrogen-added semiconductor filmcomprising single crystal grains.
 22. A method for fabrication of asemiconductor device according to claim 21, wherein a second insulatinglayer is formed on said thermal conductive layer and said firstinsulating layer.
 23. A method for fabrication of a semiconductor deviceaccording to claim 21, wherein a hydrogen-added semiconductor film isformed in contact with said second insulating layer, over at least saidfirst insulating layer.
 24. A method for fabrication of a semiconductordevice according to claim 21, wherein said crystallization is carriedout by irradiating a laser light.
 25. A method for fabrication of asemiconductor device according to claim 21, wherein said thermalconductive layer comprises at least one element selected from the groupconsisting of aluminum oxide, aluminum nitride, aluminum oxynitride,silicon nitride and boron nitride.
 26. A method for fabrication of asemiconductor device according to claim 21, wherein said thermalconductive layer comprises a material containing at least one elementselected from the group consisting of Si, N, O, Al and rare earthelements.
 27. A method for fabrication of semiconductor device accordingto claim 21, wherein said first insulating layer is a silicon oxynitridefilm comprising oxygen at a concentration from 55 atomic % to 70 atomic% and nitrogen at a concentration from 1 atomic % to 20 atomic %.
 28. Amethod for fabrication of a semiconductor device according to claim 22,wherein said second insulating layer is a silicon oxynitride filmcomprising oxygen at a concentration from 55 atomic % to 70 atomic % andnitrogen at a concentration from 1 atomic % to 20 atomic %.
 29. A methodfor fabrication of a semiconductor device according to claim 21, whereinsaid semiconductor device is a display device employing anelectroluminescence material.
 30. A method for fabrication of asemiconductor device according to claim 21, wherein said semiconductordevice is selected from the group consisting of a personal computer, avideo camera, a portable data terminal, a digital camera, a digitalvideo disk player, an electronic game equipment and a projector.
 31. Amethod for fabrication of a semiconductor device having at least one TFTprovided over a substrate, said method comprising the steps of: forminga translucent, insulating thermal conductive layer with a thermalconductivity of 10 Wm⁻¹K⁻¹ or greater over a surface of a substrate,forming a first insulating layer with a thermal conductivity of lessthan 10 Wm⁻¹K⁻¹ at a selected portion on said thermal conductive layer,forming an amorphous semiconductor film on said thermal conductive layerand said first insulating layer, crystallizing said amorphoussemiconductor film to selectively form a semiconductor film havingmultiple crystal grains on said thermal conductive layer and comprisingsingle crystal grains on said first insulating layer, and hydrogenatingsaid semiconductor film to form a hydrogen-added semiconductor filmcomprising single crystal grains on said first insulating layer, whereina channel-forming region of said TFT is formed in said hydrogen-addedsemiconductor film comprising single crystal grains, over said firstinsulating layer.
 32. A method for fabrication of a semiconductor deviceaccording to claim 31, wherein a second insulating layer is formed onsaid thermal conductive layer and said first insulating layer.
 33. Amethod for fabrication of a semiconductor device according to claim 31,wherein a hydrogen-added semiconductor film is formed in contact withsaid second insulating layer, over at least said first insulating layer.34. A method for fabrication of a semiconductor device according toclaim 31, wherein said crystallization is carried out by irradiating alaser light.
 35. A method for fabrication of a semiconductor deviceaccording to claim 31, wherein said thermal conductive layer comprisesat least one element selected from the group consisting of aluminumoxide, aluminum nitride, aluminum oxynitride, silicon nitride and boronnitride.
 36. A method for fabrication of a semiconductor deviceaccording to claim 31, wherein said thermal conductive layer comprises amaterial containing at least one element selected from the groupconsisting of Si, N, O, Al and rare earth elements.
 37. A method forfabrication of semiconductor device according to claim 31, wherein saidfirst insulating layer is a silicon oxynitride film comprising oxygen ata concentration from 55 atomic % to 70 atomic % and nitrogen at aconcentration from 1 atomic % to 20 atomic %.
 38. A method forfabrication of a semiconductor device according to claim 32, whereinsaid second insulating layer is a silicon oxynitride film comprisingoxygen at a concentration from 55 atomic % to 70 atomic % and nitrogenat a concentration from 1 atomic % to 20 atomic %.
 39. A method forfabrication of a semiconductor device according to claim 31, whereinsaid semiconductor device is a display device employing anelectroluminescence material.
 40. A method for fabrication of asemiconductor device according to claim 31, wherein said semiconductordevice is selected from the group consisting of a personal computer, avideo camera, a portable data terminal, a digital camera, a digitalvideo disk player, an electronic game equipment and a projector.
 41. Amethod for fabrication of a semiconductor device comprising the stepsof: forming a translucent thermal conductive layer over a surface of asubstrate; forming a first insulating layer at a selected portion onsaid thermal conductive layer, forming an amorphous semiconductor filmon said thermal conductive layer and said first insulating layer; andcrystallizing said amorphous semiconductor film to selectively form asemiconductor film, wherein a thermal conductivity of said translucentthermal conductive layer is higher than that of said first insulatinglayer.
 42. A method for fabrication of a semiconductor device accordingto claim 41, wherein a second insulating layer is formed on said thermalconductive layer and said first insulating layer.
 43. A method forfabrication of a semiconductor device according to claim 41, wherein ahydrogen-added semiconductor film is formed in contact with said secondinsulating layer, over at least said first insulating layer.
 44. Amethod for fabrication of a semiconductor device according to claim 41,wherein said crystallization is carried out by irradiating a laserlight.
 45. A method for fabrication of a semiconductor device accordingto claim 41, wherein said thermal conductive layer comprises at leastone element selected from the group consisting of aluminum oxide,aluminum nitride, aluminum oxynitride, silicon nitride and boronnitride.
 46. A method for fabrication of a semiconductor deviceaccording to claim 41, wherein said thermal conductive layer comprises amaterial containing at least one element selected from the groupconsisting of Si, N, O, Al and rare earth elements.
 47. A method forfabrication of a semiconductor device according to claim 41, whereinsaid first insulating layer is a silicon oxynitride film comprisingoxygen at a concentration from 55 atomic % to 70 atomic % and nitrogenat a concentration from 1 atomic % to 20 atomic %.
 48. A method forfabrication of a semiconductor device according to claim 42, whereinsaid second insulating layer is a silicon oxynitride film comprisingoxygen at a concentration from 55 atomic % to 70 atomic % and nitrogenat a concentration from 1 atomic % to 20 atomic %.
 49. A method forfabrication of a semiconductor device according to claim 41, whereinsaid semiconductor device is a display device employing anelectroluminescence material.
 50. A method for fabrication of asemiconductor device according to claim 41, wherein said semiconductordevice is selected from the group consisting of a personal computer, avideo camera, a portable data terminal, a digital camera, a digitalvideo disk player, an electronic game equipment and a projector.